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                图案化BaTiO3薄膜在Ge晶片上的单片集成

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                发表于 2018-6-5 09:07:48 | 显示全部楼层那个女杀手说道 |阅读模式
                Monolithic integration of patterned BaTiO3 thin films on Ge wafers
                图案化BaTiO3薄膜在Ge晶片上的单片集成

                Journal of Vacuum Science & Technology B 6, 1206 (2018);

                https://doi.org/10.1116/1.5026109

                Patrick Ponath and Agham Posadas
                  Department of Physics, The University of Texas at Austin, Austin, Texas 78712Michael Schmidt,Anne-Marie Kelleher, Mary White, Dan O'Connell, Paul K. Hurley, and Ray Duffy
                  Tyndall National Institute, University College Cork, Cork T12 R5CP, IrelandAlexander A. Demkova)
                  Department of Physics, The University of Texas at Austin, Austin, Texas 78712
                more...Hide Affiliations
                a)Electronic mail: demkov@physics.utexas.edu

                ABSTRACT
                摘要

                Titanates exhibit electronic properties highly desirable for field effect transistors such as very high permittivity and ferroelectricity. However, the difficulty of chemically etching titanates hinders their commercial use in device manufacturing. Here, the authors report the selective area in finestra growth of highly crystalline BaTiO3 (BTO) within photolithographically defined openings of a sacrificial SiO2 layer on a Ge (001) wafer by molecular beam epitaxy. After the BaTiO3 deposition, the sacrificial SiO2 can be etched away, revealing isolated nanoscale gate stacks circumventing the need to etch the titanate thin film. Reflection high-energy electron diffraction in conjunction with scanning electron microscopy is carried out to confirm the crystallinity of the samples. X-ray diffraction is performed to determine the out-of-plane lattice constant and crystal quality of the BTO film. Electrical measurements are performed on electrically isolated Pt/BaTiO3/SrTiO3/Ge capacitor devices.

                        用于场效应晶体管◣时钛酸盐表现出非常可取阿穆尔州首府曾经是华夏国的电子性质,例如非常ω高的介电常数和铁电性。然而,化学蚀∞刻钛酸盐的困难妨碍了它们在器件ω 制造中的商业应用。这里作者报道了通过分子束外◆延在Ge(001)晶片上的牺牲却毅然选择了安月茹创办性SiO2层的光刻限定的开口内进行高结晶BaTiO3 (BTO)的精细生长的选择性区域。在BaTiO3沉积之后,牺牲性SiO 2可被一个人蚀刻掉,揭示∑ 了隔离的纳米级栅极叠层,从而绕过了进行蚀刻钛酸盐薄膜的需要。使用反射高能电子衍射结合扫描电子显微镜来确定样品的①结晶度。使用X射线衍射来确后面并没有什么动静定BTO膜的面外晶格常数和晶体质量。电气测量是却一直没有开口在电隔离的Pt/BaTiO3/SrTiO3/Ge电容器器件上进行的。


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